smd type ic www.kexin.com.cn 1 smd type ic mos field effect transistor KPA1716 features low on-state resistance r ds(on)1 = 12.5 m typ. (v gs =-10v,i d =-4a) r ds(on)2 =17m typ. (v gs =-4.5v,i d =-4a) r ds(on)3 =19m typ. (v gs = -4.01 v, i d =-4a) low c iss :c iss = 2100 pf typ. built-in g-s protection diode small and surface mount package absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage (v gs =0) v dss -30 v gate to source voltage (v ds =0) v gss 20 v drain current (dc) ta = 25 i d(dc) 8 a drain current (pulse) *1 i d (pulse) 32 a total power dissipationta = 25 *2 p t 2.0 w channel temperature t ch 150 storage temperature t stg -55to+150 *1 pw 10 s, duty cycle 1% *2 mounted on ceramic substrate of 1200mm 2 x1.0 mm
www.kexin.com.cn 2 smd type ic smd type ic electrical characteristics ta = 25 parameter symbol testconditons min typ max unit r ds(on)1 v ds =-10v,i d = -4.0 a 12.5 16 m r ds(on)2 v gs =-4.5v,i d = -4.0 a 17 23 m r ds(on)3 v gs =-4.0v,i d = -4.0 a 19 26 m gate cut-off voltage v gs(off) v ds =-10v,i d = 1 ma -1.0 -1.6 -2.5 v forward transfer admittance | y fs |v ds =10v,i d =-4.0a 7 14 s zero gate voltage drain current i dss v ds =-30v,v gs =0 -1 a gate leakage current i gss v gs = 20v, v ds =0 10 a input capacitance c iss 2100 pf output capacitance c oss 700 pf reverse transfer capacitance c rss 300 pf turn-on delay time t d(on) 30 ns rise time t r 150 ns turn-off delay time t d(off) 120 ns fall time t f 76 ns total gate charge q g 40 nc gate to source charge q gs 6nc gate to drain charge q gd 10 nc body diode forward voltage v f(s-d) i f =8.0a,v gs =0 0.8 v reverse recovery time trr i f =8.0a,v gs =0v 45 ns reverse recovery charge qrr d i /d t =100a/ s 33 nc v ds =-10v,v gs =0,f=1mhz i d = -8.0a, v dd =-24v,v gs =-10v i d =-4.0a,v gs(on) =-10v,v dd =-15 v,r g =10 draintosourceon-stateresistance KPA1716
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